| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent the crosstalk phenomenon that light is mixed to adjacent pixels by deeply forming an element isolation film into a semiconductor substrate and the interface of an epitaxial layer. CONSTITUTION: An epitaxial layer(110) is formed on a semiconductor substrate(100). A trench, which defines a pixel based photo diode region from the epitaxial layer surface to the interface with the semiconductor substrate, is formed. An element isolation film(112) is formed by filing a insulating material in the trench. A photo diode(114) is formed in the epitaxial layer between the element isolation films. A planarization layer(140) is formed on a color filter layer. A micro lens(150) is formed on the planarization layer.
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