| 摘要 |
PURPOSE: A CMP slurry composition and a polishing method using thereof are provided to improve the polishing speed of the composition for a copper wiring and to reduce a dishing phenomenon on the surface of an object by using a slow etching speed. CONSTITUTION: A CMP slurry composition for a copper wiring contains ultrapure water, an abrasive, an oxidizer, a corrosion inhibitor, and organic acid. The organic acid contains a thiophene group as a corrosion-inhibitory functional group and a carboxyl group as a chelating functional group. The organic acid is selected from the group consisting of thiophene carboxylic acid, thiophene dicarboxylic acid, thiophene tetracarboxylic acid, and their salt forms.
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