| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element which can obtain a flat film in an earlier stage of a growth process than before, in a method of manufacturing a semiconductor light-emitting apparatus including a process of forming a semiconductor layer using a lateral growth method after arranging a mask for selective growth on a substrate for growth. <P>SOLUTION: The mask for selective growth, which partially covers the substrate for growth, is formed on the substrate for growth. Next, a semiconductor film is laterally grown from a non-mask part, which is not covered with the mask on the substrate for growth, to form a through dislocation blocking layer covering the mask. Next, a device function layer containing a light-emitting layer is epitaxially grown above the through dislocation blocking layer. The process of forming the through dislocation blocking layer alternately repeats a first step and a second step of performing the growth of the semiconductor film at mutually different growth rates, under a normal pressure and a temperature atmosphere lower than the growth temperature of a device function layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
