| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, such as an IGBT and a MOS transistor, that achieves improvement in dielectric voltage, reinforcement in potential noise margin, and microfabrication of a polycrystalline silicon interconnection. SOLUTION: In an SOI layer 99 of an SOI substrate 100 having a buried oxide film 102, a first insulating isolation trench 109 is formed deep enough to reach the buried oxide film 102, and the IGBT is formed in an element region 103 insulated and isolated while enclosed with the first insulating isolation trench 109. Further, a second insulating isolation trench 110 is formed deep enough to reach the buried oxide film 102 while enclosing the first insulating isolation trench 109. A potential fixed region 104 is formed of an SOI layer between the first insulating isolation trench 109 and second insulating isolation trench 110, and the potential fixed region 104 is set (connected) to have the same potential as a collector potential of the IGBT. COPYRIGHT: (C)2010,JPO&INPIT |
