LOCAL SILICIDATION OF VIA BOTTOMS IN METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES

摘要

Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.