发明名称 |
Multiple-Gate Transistors with Reverse T-Shaped Fins |
摘要 |
A method of forming an integrated circuit structure includes forming a first insulation region and a second insulation region in a semiconductor substrate and facing each other; and forming an epitaxial semiconductor region having a reversed T-shape. The epitaxial semiconductor region includes a horizontal plate including a bottom portion between and adjoining the first insulation region and the second insulation region, and a fin over and adjoining the horizontal plate. The bottom of the horizontal plate contacts the semiconductor substrate. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric.
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申请公布号 |
US2010163842(A1) |
申请公布日期 |
2010.07.01 |
申请号 |
US20080345332 |
申请日期 |
2008.12.29 |
申请人 |
LAI LI-SHYUE;LIN JING-CHENG |
发明人 |
LAI LI-SHYUE;LIN JING-CHENG |
分类号 |
H01L29/15;H01L21/20 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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