| 摘要 |
A resistive memory device and a fabrication method thereof are provided. The fabrication method includes: providing a substrate; forming a lower electrode over the substrate; forming a variable resistive material layer over the lower electrode; forming an ion implantation region to a predetermined depth from a surface of the variable resistive material layer by implanting metal ions or oxygen ions to the surface of the variable resistive material layer; and forming an upper electrode over the variable resistive material layer including the ion implantation region.
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