发明名称 DISCHARGE PHASE CHANGE MATERIAL MEMORY
摘要 An information storage array includes a programmable material at a storage location and a capacitor set. A switching network charges the capacitor set to a first voltage and discharges the capacitor set at a second voltage. The second voltage is greater than the first voltage and it or a waveform derived therefrom is applied to the storage location to thereby change a state of the programmable material.
申请公布号 US2010165726(A1) 申请公布日期 2010.07.01
申请号 US20090650676 申请日期 2009.12.31
申请人 SHEPARD DANIEL R 发明人 SHEPARD DANIEL R.
分类号 G11C11/00;G11C7/00 主分类号 G11C11/00
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