| 摘要 |
<p>The invention relates to a method of fabricating a back-illuminated image sensor comprising the steps of providing a first substrate comprising a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.</p> |
