| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent occurrence of defective patterns in resist patterns using a molecular resist material. <P>SOLUTION: First, on a substrate, a resist film 102 is formed from a resist material which contains a cyclic oligomer of at least trimer which contains no acid-unstable group and is alkali-soluble, a molecular compound containing an acid-unstable group and a photoacid generator, and does not contain a polymer. Then, the resist film 102 thus formed is selectively irradiated with exposure light consisting of extreme ultraviolet rays to perform pattern exposure. Then, the resist film 102 which is subjected to pattern exposure is heated, and then the heated resist film 102 is developed to form a resist pattern 102a from the resist film 102. <P>COPYRIGHT: (C)2010,JPO&INPIT |
