发明名称 PHASE SHIFT MASK, MANUFACTURING METHOD THEREOF, AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a phase shift mask having a new structure. <P>SOLUTION: The phase shift mask is provided with a shielded region having a line pattern formed therein and first and second transparent regions disposed on both sides of the shielded region on a substrate transparent to irradiated light, wherein a phase shifter is formed below the first transparent region and a side wall of the phase shifter has a curved portion convex to the outside. This phase shifter is formed by, for example, causing a femtosecond pulse laser to scan while irradiating it from above the substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010145800(A) 申请公布日期 2010.07.01
申请号 JP20080323727 申请日期 2008.12.19
申请人 ELPIDA MEMORY INC 发明人 HIROSHIMA MASAHITO
分类号 G03F1/30;G03F1/68 主分类号 G03F1/30
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