发明名称 Substrate Processing Apparatus
摘要 [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber. [Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.
申请公布号 US2010163179(A1) 申请公布日期 2010.07.01
申请号 US20060086634 申请日期 2006.12.12
申请人 TOZAWA SHIGEKI;MURAKI YUSUKE;IINO TADASHI;HAYASHI DAISUKE 发明人 TOZAWA SHIGEKI;MURAKI YUSUKE;IINO TADASHI;HAYASHI DAISUKE
分类号 B08B13/00 主分类号 B08B13/00
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