发明名称 |
Semiconductor Device Having Saddle Fin Transistor and Method for Fabricating the Same |
摘要 |
A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the isolation region of the semiconductor substrate; forming an isolation layer within the trench; etching an active region of the semiconductor substrate by a certain depth to form a recessed isolation region; etching the isolation layer by a certain depth to form a recessed isolation region; depositing a gate metal layer in the recessed active region and the recessed isolation region to form a gate of a cell transistor; forming an insulation layer over an upper portion of the gate; removing the pad nitride layer to expose a region of the semiconductor substrate to be formed with a contact plug; and depositing a conductive layer in the region of the semiconductor substrate to form a contact plug.
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申请公布号 |
US2010163976(A1) |
申请公布日期 |
2010.07.01 |
申请号 |
US20090494567 |
申请日期 |
2009.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE JIN YUL;KIM DONG SEOK |
分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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