LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY

摘要

Disclosed is a light-receiving element having a light-receiving sensitivity in the infrared region, wherein good crystallinity can be easily obtained.  The light-receiving element can decrease the dark current, and an one-dimensional or two-dimensional array of the light-receiving elements can be easily formed with high precision.  A light-receiving element array, a method for manufacturing the light-receiving element and a method for manufacturing the light-receiving element array are also disclosed. The light-receiving element has a group III-V compound semiconductor multilayer structure which contains a p-n junction (15) in a light-receiving layer (3).  The light-receiving element is characterized in that the light-receiving layer has a multiple quantum well structure of a group III-V compound semiconductor, the p-n junction (15) is formed by selectively dispersing an impurity element within the light-receiving layer, and the impurity concentration in the light-receiving layer is not more than 5 × 1016 cm-3.