| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image pick-up device having a configuration in which minority carriers generated by a photoelectric conversion element easily escape outside. <P>SOLUTION: A solid-state image sensing device includes: the photoelectric conversion element formed inside a semiconductor substrate; an insulating layer provided on the surface side of the semiconductor substrate; a plurality of wiring layers formed inside the insulating layer; and a semiconductor area formed inside the semiconductor substrate around the photoelectric conversion element. Further, the solid-state image sensing device includes: a conductive material layer formed in contact with at least part of the semiconductor area; an electrode layer formed inside the insulating layer and for connecting with external wiring; and an opening provided above the electrode layer from the rear face of the semiconductor substrate. The electrode layer is formed in the same layer where the wiring layer is formed foremost at the photoelectric conversion element side, and light is radiated on the photoelectric conversion element from the rear surface side of the semiconductor substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT |
