| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress reliability reduction caused by hydrogen by forming a hydrogen barrier film with a simple step and to reduce a capacitance between word lines by providing a gap between the word lines. Ž<P>SOLUTION: The method of manufacturing a nonvolatile semiconductor memory device includes: a step of forming a plurality of control gate electrodes 17 by connecting charge accumulation layers 11 of a plurality of memory cell transistors C arranged on a semiconductor substrate 100 to the plurality of charge accumulation layers 11 with intergate insulating films 7 interposed on the plurality of accumulation layers 11, in a specific direction, and by arranging to be adjacent to each other in a direction perpendicular to the specific direction; a step of forming a hydrogen-blocking barrier insulating film 15 so as to be contacted with and spread across the upper surfaces of the plurality of control gate electrodes 17; and a step of forming an interlayer insulating film 16 on the upper surfaces of the barrier insulating film 15. A gap 20 is defined by a region surrounded by side walls of the charge accumulation layers 11 adjacent at least in the perpendicular direction, and by the semiconductor substrate 100 and the barrier insulating film 15. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
