发明名称 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.
申请公布号 US2010163865(A1) 申请公布日期 2010.07.01
申请号 US20090634060 申请日期 2009.12.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 ARAI YASUYUKI
分类号 H01L29/786;H01L21/336;H01L21/34;H01L33/00 主分类号 H01L29/786
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