METHOD FOR INDEXING DIES COMPRISING INTEGRATED CIRCUITS

摘要

An embodiment of a method for indexing a plurality of die obtainable from a material wafer comprising a plurality of stacked material layers is disclosed. Each die is obtained in a respective position of the wafer; the plurality of dies is obtained by means of a manufacturing process performed in at least one manufacturing stage using at least one lithographic mask for treating a surface of the material wafer trough an exposition to a proper radiation. Said at least one manufacturing stage comprises at least two steps for treating a respective superficial portion of the material wafer that corresponds to a subset of said plurality of dies using the at least one lithographic mask through the exposition to the proper radiation in temporal succession. The method may include providing a die index on each die which is indicative of the position of the respective die by forming an external index indicative of the position of the superficial portion of the material wafer corresponding to the subset of the plurality of dies including said die. Said forming the external index may comprise forming in a set of material layers of the die a first reference structure adapted to define a mapping of the superficial portions of the wafer; said first reference structure may comprise a plurality of electronic components electrically coupled to each other by means of a respective common control line. The method may further comprise interrupting the control line in a position based on the position of the superficial portion corresponding to the subset of the plurality of dies including the die.