| 摘要 |
In an embodiment, the invention provides a method for characterizing a threshold voltage of a flash memory cell. The method comprises generating a pulse train signal on flash memory IC, applying the pulse train signal to an external low-pass filter, and applying an output of the low-pass filter to the input of an external gain stage. An analog signal from the output of the gain stage is directed to a control gate of the flash memory cell. An electrical parameter of the flash memory cell is measured by an external tester.
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