发明名称 |
Apparatus and methods for forming a modulation doped non-planar transistor |
摘要 |
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed. |
申请公布号 |
US2010163927(A1) |
申请公布日期 |
2010.07.01 |
申请号 |
US20080319097 |
申请日期 |
2008.12.30 |
申请人 |
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发明人 |
PILLARISETTY RAVI;HUDAIT MANTU;RADOSAVLJEVIC MARKO;RACHMADY WILLY;DEWEY GILBERT;KAVALIEROS JACK |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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