发明名称 |
COMBINATION, METHOD, AND COMPOSITION FOR CHEMICAL MECHANICAL PLANARIZATION OF A TUNGSTEN-CONTAINING SUBSTRATE |
摘要 |
PURPOSE: A combination for a substrate containing tungsten is provided to be effectively used in tungsten CMP(chemical-mechanical planarization), to have low tungsten/derivative selectivity for adjustable tungsten CMP, and to obtain high removal ratio of the tungsten and dielectric materials during the CMP process. CONSTITUTION: The combination for a substrate containing tungsten is the combination of chemical and mechanical polishing composition. The combination includes a substrate having a sub-micron integrated circuit and a surface with one or more features on the surface containing the tungsten. The substrate contacts with the chemical and mechanical polishing composition including periodic acid and an abrasive.
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申请公布号 |
KR20100074077(A) |
申请公布日期 |
2010.07.01 |
申请号 |
KR20090130133 |
申请日期 |
2009.12.23 |
申请人 |
DUPONT AIR PRODUCTS NANOMATERIALS LLC |
发明人 |
MCCONNELL RACHEL DIANNE;MEYERS ANN MARIE |
分类号 |
C09K3/14;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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