TRENCH SCHOTTKY BARRIER DIODE

摘要

PROBLEM TO BE SOLVED: To provide a trench Schottky barrier diode that improves the relation of trade-off between a leakage current IR in reverse direction and a forward drop voltage VF even when the carrier balance is excessive in n because of the variation of production. SOLUTION: The trench Schottky barrier diode 100 includes: a semiconductor substrate 110 provided with an n+-type cathode area 112 and an n--type drift area 114; a trench area 116 that is provided with a plurality of second main-surface-side trench areas 122 having such a structure where a conductive material 126 is varied with an insulation layer 124 in between and a plurality of p-type first main-surface-side trench areas 120; a mesa area 118 that is located at a part pinched with adjacent trench areas 116 in the drift area 114; and a barrier metal layer 128 that is formed on the second main surface of the semiconductor substrate 110 and forms Schottky junction with the mesa area 118. COPYRIGHT: (C)2010,JPO&INPIT