| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with high reliability, which is resistive to a high voltage and a gate structure of which is never destroyed even when used at a high voltage. SOLUTION: The semiconductor device includes a semiconductor region 3, a source electrode 40 and a drain electrode 44 provided on a principal surface of the semiconductor region 3, a gate electrode 42 provided across a p-type material film 60a provided on the principal surface of the semiconductor region 3, disposed between the source electrode 40 and drain electrode 44, having normally-off characteristics, and a fourth electrode 50 provided on the principal surface of the semiconductor region 3 and disposed between the gate electrode 42 and drain electrode 44. COPYRIGHT: (C)2010,JPO&INPIT |
