| 摘要 |
A semiconductor device includes a substrate, a gate electrode formed on the substrate, a source region and a drain region formed in the substrate, the source region and the drain region formed located on the both side of the gate electrode, a first insulating film formed on the substrate, the first insulating film for generating a stress in a channel region under the gate electrode, a contact formed on the source region and the drain region, and the contact formed so that an amount of the first insulating film formed on the source region is larger than an amount of the first insulating film formed on the drain region.
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