发明名称 |
NONVOLATILE MEMORY WITH OVONIC THRESHOLD SWITCHES |
摘要 |
A memory device including a plurality of memory cells being arranged in a matrix having a plurality of rows and a plurality of columns. Each memory cell includes a storage element and a selector for selecting the corresponding storage element during a reading operation or a programming operation. The memory device further including a plurality of row lines each one for selecting the memory cells of a corresponding row and a plurality of column lines each one for selecting the memory cells of a corresponding column. The memory device further includes for each line among the row lines and/or the column lines a respective set of local lines each one for selecting a group of memory cells of the corresponding line, and a respective set of selection elements each one for selecting a corresponding local line of the set in response to the selection of the respective line.
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申请公布号 |
US2010165716(A1) |
申请公布日期 |
2010.07.01 |
申请号 |
US20080346700 |
申请日期 |
2008.12.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
KAU DERCHANG;ATWOOD GREG;SPADINI GIANPAOLO |
分类号 |
G11C11/00;G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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