发明名称 PHASE CHANGE MATERIAL MEMORY HAVING NO ERASE CYCLE
摘要 An information storage array includes a programmable material at one or more storage locations and pulse generation circuitry for generating at least two pulses—in particular, a write pulse that writes a value into the programmable material an erase pulse that erases a value from the programmable material. In general, the erase pulse is greater in duration than the write pulse. Either the write pulse or the erase pulse is selected based at least in part on a state of a data bit to be stored in the programmable material.
申请公布号 US2010165727(A1) 申请公布日期 2010.07.01
申请号 US20090650682 申请日期 2009.12.31
申请人 SHEPARD DANIEL R 发明人 SHEPARD DANIEL R.
分类号 G11C11/00;G11C7/00 主分类号 G11C11/00
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