| 摘要 |
In a vertical diode, an N+-type layer, an N−-type layer, and a P+-type layer are stacked in this order on a lower electrode film, and an upper electrode film is provided thereon. The effective impurity concentration of the N−-type layer is lower than the effective impurity concentrations of the N+-type layer and the P+-type layer. At least one of the N+-type layer, the N−-type layer, and the P+-type layer is formed from a small grain size polycrystalline semiconductor whose each crystal grain does not penetrate each layer through its thickness. |
