| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of preventing the generation of embedding failure in a trench contact, irrespective of the material of upper electrode. <P>SOLUTION: In order to expose an n<SP>+</SP>-type emitter region 5 or a body p layer 6 (p-type base region 3), an opening end of a contact hole 10a formed on an interlayer insulating film 10 is retracted, and the opening width of the contact hole 10a is expanded. In this way, an aspect ratio of the depth of a contact trench 11 plus the thickness of the interlayer insulating film 10 to the opening width of the contact hole 10a is made smaller than that in a conventional manufacturing method. Thus, an upper electrode 12 can be unfailingly embedded into the contact trench 11. Accordingly, the embedding failure in the contact trench 11 can be prevented irrespective of the material of the upper electrode 12. <P>COPYRIGHT: (C)2010,JPO&INPIT |
