| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a layout method capable of preventing generation of silicon residue in a semiconductor device, particularly, an capacitance type physical quantity sensor, and to provide an capacitance type physical quantity sensor formed by the layout method, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a semiconductor substrate, a first etching region of the semiconductor substrate that is to be etched in a first depth, and second etching region of the semiconductor substrate that is to be etched in a second depth greater than the first depth by repeating etching of the semiconductor substrate and forming of a deposition film. The first etching region encloses the second etching region. <P>COPYRIGHT: (C)2010,JPO&INPIT |
