| 摘要 |
PROBLEM TO BE SOLVED: To improve efficiency of a refresh operation in a ferroelectric memory. SOLUTION: The ferroelectric memory is provided with: a memory cell array (111) having a plurality of memory cells (121), wherein a plurality of word lines, a plurality of bit lines and a plurality of plate lines are arranged and each plate line corresponds to two or more word lines; an access control circuit (113) for performing an access operation to a selection cell selected among the memory cells; and a refresh control circuit (113) for performing the refresh operation of a refresh cell selected among the memory cells in the background of the access operation. The refresh control circuit (113) performs the refresh operation when a plate line connected to the selection cell and a bit line connected to the selection cell have the same potential after the access operation. COPYRIGHT: (C)2010,JPO&INPIT
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