| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing device capable of preventing reaction byproducts from attaching to a wall surface of a reaction chamber. Ž<P>SOLUTION: A first inert gas introduction nozzle 58 is formed in the inside of a reaction chamber 12 so as to let inert gas 56 flow from near the surface 14 of the reaction chamber wall on the side of the gate valve 44 of the reaction chamber 12. An exhaust port 60 is formed on the wall surface of the reaction chamber 12 on the side that counters the first inert gas introduction nozzle 58. During the process operation, the inert gas 56 is supplied from the side surface direction of a susceptor 18 and the gas is changed into laminar flow state so that the inert gas can flow to the side of the exhaust port 60, while preventing the reaction byproducts from attaching to each section of the members in the reaction chamber 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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