| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the process of fabricating a semiconductor device which ensures a stabilized capacitance between oscillators, while controlling increase in the manufacturing process. Ž<P>SOLUTION: The process of manufacturing the semiconductor device 1, that includes beam-type oscillators 21 and 22 each having a free end which extends freely into a recess 100, formed in the upper surface of a semiconductor substrate 10 and a fixed end which is fixed to the semiconductor substrate 10, includes a step of forming an isolation groove, in which an insulating isolation region 30 between the oscillator 22 and the semiconductor substrate 10 is formed, while simultaneously exposing the side surface of the oscillators 21 and 22, by etching a part of the upper surface of the semiconductor substrate 10; a step of forming the insulating isolation region 30 by thermally oxidizing the surface of the isolation groove and filling the isolation groove with an oxide film; a step of forming a side surface protective film by thermally oxidizing the side surface of the oscillators 21 and 22; and a step of forming the oscillators 21 and 22, arranged in the recess 100 formed in the semiconductor substrate 10, by etching the semiconductor substrate 10 using the side surface protective film as a mask and exposing the lower surface of the oscillators 21 and 22. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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