发明名称 HIGH POWER INTEGRATED CIRCUIT DEVICE
摘要 An integrated circuit (IC) includes a substrate having a semiconducting surface, a first array of devices on and in the semiconducting surface including first and second coacting current conducting nodes, a plurality of layers disposed on the substrate and including at a electrically conductive layers and dielectric layer, and a plurality of bump pads on or in the top surface of the dielectric layers. In the IC, the electrically conductive layers define electrical traces, where a first portion of the electrical traces contact a first portion of the bump pads exclusively to a portion of the first coacting current conducting nodes, where a second portion of the electrical traces contact a second portion of the bump pads exclusively to a portion of the second coacting current conducting nodes, and where the electrical traces are electrically isolated from one another by the dielectric layers.
申请公布号 US2010164052(A1) 申请公布日期 2010.07.01
申请号 US20080347522 申请日期 2008.12.31
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 WIKTOR STEFAN W.;MURATOV VLADIMIR A.;COYLE ANTHONY L.;LANGE BERNHARD P.
分类号 H01L29/72;H01L23/485 主分类号 H01L29/72
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