发明名称 Parametric Testline with Increased Test Pattern Areas
摘要 An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.
申请公布号 US2010164521(A1) 申请公布日期 2010.07.01
申请号 US20100704252 申请日期 2010.02.11
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN HSIEN-WEI;HSU SHIH-HSUN;TSAI HAO-YI;JENG SHIN-PUU
分类号 G01R31/02 主分类号 G01R31/02
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