| 摘要 |
<p>PURPOSE: An overlay mark and a measuring method using the same are provided to prevent the wrong selection of a layer by forming an overlay mark in a character shape on each layer of a semiconductor device. CONSTITUTION: An insulating layer(120) is formed on the upper side of a semiconductor substrate. A first overlay mark(130) is formed in the insulating layer. A second overlay mark(140) is formed on the upper side of the insulating layer. The second overlay mark is formed in order to the overlay of the first overlay mark. The overlay marks are formed in character shape. The center(C) of the first overlay mark is a middle point of the insulating layer.</p> |
