METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME

摘要

A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz lo layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.