发明名称 BACK SIDE ILLUMINATON IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
摘要 A back side illumination image sensor according to an embodiment includes: a device isolation region and a pixel region that are on a front side of a first substrate; a light sensor and a readout circuit that are on the pixel region; an interlayer dielectric layer and a metal line that are on the front side of the first substrate; a second substrate that is bonded to the front side of the first substrate on which the metal line is formed; a pixel isolating dielectric layer that is on the device isolation region at a back side of the first substrate; and a microlens that is on the light sensor at the back side of the first substrate
申请公布号 US2010164035(A1) 申请公布日期 2010.07.01
申请号 US20090640822 申请日期 2009.12.17
申请人 KIM MUN HWAN 发明人 KIM MUN HWAN
分类号 H01L31/14;H01L31/02;H01L31/0232;H01L31/18 主分类号 H01L31/14
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