| 摘要 |
A contact structure, a method of manufacturing the same, a phase-changeable memory device having the same, and a method of manufacturing the phase-changeable memory device are described. The phase-changeable memory device includes: an upper electrode, a bit line, and a bit line contact unit. The upper electrode is on a semiconductor substrate having a phase-change pattern. The bit line is on the upper electrode. The bit line contact unit is interposed between the upper electrode and the bit line and electrically couples together the upper electrode to the bit line. The bit line contact unit includes a main conductive layer, a first and second barrier film. The first barrier film surrounds a bottom portion and a side portion of the main conductive layer. The second barrier film is on the main conductive layer.
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