发明名称 OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL
摘要 A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.
申请公布号 US2010163822(A1) 申请公布日期 2010.07.01
申请号 US20090637644 申请日期 2009.12.14
申请人 STMICROELECTRONICS S.R.L. 发明人 OVSHINSKY STANFORD;LOWREY TYLER;REED JAMES D.
分类号 H01L45/00;C22C30/00;H01L29/18 主分类号 H01L45/00
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