| 摘要 |
A phase change memory device is provided, including a semiconductor substrate with a first conductive semiconductor layer disposed thereover, wherein the first conductive semiconductor layer has a first conductivity type. A first dielectric layer is disposed over the semiconductor substrate. A second conductive semiconductor layer having a second conductivity type opposite to the first conductivity type is disposed in the first dielectric layer. A heating electrode is disposed in the first dielectric layer and formed over the second conductive semiconductor layer, wherein the heating electrode has a tapered cross section and includes metal silicide. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer. An electrode is disposed over the second dielectric layer, covering the phase change material layer.
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