| 摘要 |
<p>PURPOSE: A semiconductor memory device is provided to minimize a region in which a memory cell is formed by simplifying the pattern of a memory cell active region which is formed in a memory cell array. CONSTITUTION: A memory cell active region is formed on silicon on insulator semiconductor substrate(19). A floating body cell transistor is formed in the memory cell active region. Floating body cell transistors are formed in the memory cell active region. A non-active transistor for isolating cells is formed between the floating body cell transistors. The non-active transistor for isolating the cells is composed of a word-line(20), a source/drain(18), and a substrate region(19a). The non-active transistor is controlled in an off-state while a semiconductor memory device is operating.</p> |
