发明名称 METHOD AND SYSTEM FOR FORMING AN AIR GAP STRUCTURE
摘要 A method for forming an air gap structure on a substrate is described. The method comprises forming a sacrificial layer on a substrate, wherein the sacrificial layer comprises a decomposable material that thermally decomposes at a thermal decomposition temperature above approximately 350 degrees C. Thereafter, a cap layer is formed on the sacrificial layer at a substrate temperature less than the thermal decomposition temperature of the sacrificial layer. The sacrificial layer is decomposed by performing a first exposure of the substrate to ultraviolet (UV) radiation and heating the substrate to a first temperature less than the thermal decomposition temperature of the sacrificial layer, and the decomposed sacrificial layer is removed through the cap layer. The cap layer is cured to cross-link the cap layer by performing a second exposure of the substrate to UV radiation and heating the substrate to a second temperature greater than the first temperature.
申请公布号 KR20100074239(A) 申请公布日期 2010.07.01
申请号 KR20107009516 申请日期 2008.10.14
申请人 TOKYO ELECTRON LIMITED 发明人 LIU JUNJUN;TOMA DOREL I.
分类号 H01L21/3205 主分类号 H01L21/3205
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