| 摘要 |
PURPOSE: A metal line of a semiconductor device and a fabrication method thereof are provided to effectively prevent a void in an insulating area by forming a IMD(Inter Metal Dielectric) film which completely covers the insulating area on a metal wiring. CONSTITUTION: Metal material is formed in a semiconductor substrate(202) through a deposition process. A metal wiring(206) is formed by patterning the part of the metal material to remain on the semiconductor substrate. The remaining metal material is oxidized to form an oxide layer(212) on an insulating area. The insulating area is completely filled to form inter-layer insulating films(204,214) on the metal wiring.
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