| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is downsized by reducing the occupied area of a region, wherein a circuit is formed on a semiconductor substrate. SOLUTION: An RESURF region 24 is formed so as to surround a high-potential logic region 25 with an isolation region 30 interposed therebetween, in which a sense resistance 9 and a first logic circuit 26 which are applied with a high potential are formed. On the outside of the RESURF region 24, a second logic circuit region is formed, which is applied with the driving voltage level required for driving a second logic circuit 22 with respect to the ground potential. In RESURF region 24, a drain electrode 12 of a field-effect transistor T is formed along the inner periphery, and a source electrode 10 is formed along the outer periphery. Furthermore, a polysilicon resistance 4 connected to the sense resistance 9 is formed in the shape of a spiral from the inner peripheral side toward the outer peripheral side. COPYRIGHT: (C)2010,JPO&INPIT |
