| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling apparatus where a sample tube is transferred to a feeding part with a simple constitution and maintenance performance is enhanced. SOLUTION: The silicon single crystal pulling apparatus 1 to pull a doped silicon single crystal from a melt by a Czochralski method has a pulling furnace 2 in which the melt is housed, a hollow sample chamber 100 attached externally to the pulling furnace 2 and communicated with the inside of the pulling furnace 2, the sample tube 6 in which a sublimable dopant to be fed into the melt is housed, a support 120 to support the sample tube 6 and a transferring means 110 to transfer the sample tube 6 supported by the support 120 to the inside of the pulling furnace 2 at a state that the support 120 is supported at the inside of the sample chamber 100. COPYRIGHT: (C)2010,JPO&INPIT
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