发明名称 |
Implant process for blocked salicide poly resistor and structures formed thereby |
摘要 |
Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting an exposed p type silicon portion of a substrate with a carbon species, wherein endcap regions of a blocked salicide resistor and a p type structure that are both disposed on the exposed p type silicon portion of the substrate are implanted with the carbon species.
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申请公布号 |
US2010164001(A1) |
申请公布日期 |
2010.07.01 |
申请号 |
US20080319015 |
申请日期 |
2008.12.30 |
申请人 |
PARK JOODONG;JAN CHIA-HONG;MCGILL LISA M |
发明人 |
PARK JOODONG;JAN CHIA-HONG;MCGILL LISA M. |
分类号 |
H01L27/092;H01L21/22;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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