摘要 |
<p>A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.</p> |
申请人 |
INTEL CORPORATION;KEATING, STEVEN J.;LINDERT, NICK;RAHHAL-ORABI, NADIA;DOYLE, BRIAN;SURI, SATYARTH;SIVAKUMAR, SWAMINATHAN;JONG, LANA;SHA, LIN |
发明人 |
KEATING, STEVEN J.;LINDERT, NICK;RAHHAL-ORABI, NADIA;DOYLE, BRIAN;SURI, SATYARTH;SIVAKUMAR, SWAMINATHAN;JONG, LANA;SHA, LIN |