| 摘要 |
<p>A semiconductor device including: a p-type semiconductor region (21); an n-type light reception surface embedded region (23) embedded in the semiconductor region (21); an n-type charge accumulation region (24) arranged continuous to the light reception surface embedded region (23) and having a potential well deeper than the light reception surface embedded region (23); a charge read-out region which reads out electric charge accumulated in the charge storage region (24); a discharge drain region (25) for discharging electric charge from the light reception surface embedded region (23); first potential control means (31, 30) which discharge electric charge from the light reception surface embedded region (23) to the discharge drain region (25); and second potential control means (32, 30) which transfer electric charge from the charge accumulation region (24) to the charge read-out region.</p> |
