DUAL INSULATING LAYER DIODE WITH ASYMMETRIC INTERFACE STATE AND METHOD OF FABRICATION
摘要
<p>An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. The diode is a metal-insulator diode having a first metal layer, a first insulating layer, a second insulating layer and a second metal layer. At least one asymmetric interface state is provided at the intersection of at least two of the layers to increase the ratio of the diode's on-current to its reverse bias leakage current. In various examples, the asymmetric interface state is formed by a positive or negative sheet charge that alters the barrier height and/or electric field at one or more portions of the diode. Two-terminal devices such as passive element memory cells can utilize the diode as a steering element in series with a state change element. The devices can be formed using pillar structures at the intersections of upper and lower conductors.</p>
申请公布号
WO2010074785(A1)
申请公布日期
2010.07.01
申请号
WO2009US58858
申请日期
2009.09.29
申请人
SANDISK 3D LLC;CHEN, XIYING;SEKAR, DEEPAK, CHANDRA;CLARK, MARK;NGUYEN, DAT;KUMAR, TANMAY