| 摘要 |
<p>PURPOSE: A multi overlay measurement mark and a forming method thereof are provided to prevent an overlay measurement error by forming an overlay measurement mark which has optimal reflectance between a multi overlay outer box pattern and an inner box pattern. CONSTITUTION: A pair of first via patterns(104) are parallel in a first direction in the upper part of a substrate(100). A thin film pattern(106) is located in order not to be overlapped with a pair of first via patterns. A pair of second via patterns(108) are vertically formed towards the first direction which is located in the upper part of the thin film pattern. A inner box pattern(110) is located in the upper part of the thin film pattern. The first via pattern is formed into a material which is different from the second via pattern. The second via pattern has a step with the first via pattern.</p> |
